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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC2334 DESCRIPTION With TO-220 package Complement to type KSA1010 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 150 Collector-base voltage Open emitter Collector-emitter voltage Open base 100 7 7 15 3.5 Ta=25ae 1.5 Emitter-base voltage Collector current Collector current-peak Base current Open collector UNIT V V V A A A PT Total power dissipation TC=25ae 40 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Base-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=5.0A ,IB=0.5A,L=1mH IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=100V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=5A ; VCE=5V 40 40 20 MIN 100 TYP. KSC2334 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3 MAX UNIT V 0.6 1.5 10 10 |I |I V V A A 240 Switching times resistive load ton ts tf Turn-on time Storage time TOR NDU ICO E SEM ANG INCH 0.5 |I IC=5A IB1=- IB2=0.5A RL=10| ;VCCO 50V 1.5 Fall time 0.5 |I s |I s s hFE-2 Classifications R 40-80 O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE KSC2334 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC2334 TOR NDU ICO E SEM ANG INCH 4 |
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